| 摘要: |
| 新一代弛豫铁电薄膜Pb（In1/2Nb1/2）O3-Pb（Mg1/3Nb2/3）O3-PbTiO3（PIMNT）因兼具优异的电学性能与高的相变温度,在国内外获得广泛关注.为了探究不同薄膜厚度对PIMNT薄膜的结构及电学性能的影响,通过溶胶凝胶法制备了150 nm~1 μm不同厚度的PIMNT薄膜,对其形貌结构以及电学性能进行了对比研究,在此基础上进一步研究了极化对其电学性能的影响.实验结果表明：随着厚度的增加,薄膜介电常数先增加后略有降低,剩余极化强度先增大后减小,矫顽场逐渐增大；在极化电压为18 V、极化温度和时间分别为100℃和5 min时,1 μm厚度PIMNT薄膜的介电常数和损耗在100 Hz下分别为1 009和0.022,室温下的热释电系数达6.85×10-4 C·m-2·K-1,是目前主流的锆钛酸铅（PZT）薄膜的3倍左右. |
| 关键词: Pb（In1/2Nb1/2）O3-Pb（Mg1/3Nb2/3）O3-PbTiO3（PIMNT）薄膜 厚度尺寸效应 电学性能 极化 热释电系数 |
| DOI：10.3969/J.ISSN.1000-5137.2023.05.006 |
| 分类号:O 469 |
| 基金项目:国家自然科学基金（11974250） |
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| Investigation on the thickness size effect of Pb（In1/2Nb1/2）O3-Pb（Mg1/3Nb2/3）O3- PbTiO3 relaxor ferroelectric thin films |
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JIA Huixia1, YANG Jiaqian1, SHEN Yichen2, XIE Jizhou2, DUAN Zhihua1, WANG Feifei1
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1.Mathematics and Science College, Shanghai Normal University, Shanghai 200234, China;2.High School Affiliated to Shanghai Normal University at Baoshan, Shanghai 200444, China
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| Abstract: |
| The new generation of relaxation ferroelectric film Pb（In1/2Nb1/2）O3-Pb（Mg1/3Nb2/3）O3-PbTiO3（PIMNT） has gained wide attention due to its excellent electrical properties and high phase transition temperature. In order to explore the influence of different thicknesses on the structure and electrical properties of PIMNT films, PIMNT films with different thicknesses of 150 nm to 1 μm were fabricated by sol-gel method, and the microstructure and electrical properties were compared. On this basis, the influence of polarization on their electrical properties was further studied. The test results showed that with the increase of the thickness, the dielectric constant first increased and then slight decreased. The remnant polarization first increased to a maximum and then decreased, and the coercive field gradually increased. Under the polarization condition of 18 V and 100 ℃ for 5 min, the dielectric constant and loss of the poled PIMNT film at 100 Hz with 1 μm thickness were 1 009 and 0.022 respectively, and the pyroelectric coefficient at room temperature reached 6.85×10-4 C·m-2·K-1, reaching about 3 times that of the current mainstream PbZrxTi1-xO3（PZT） film. |
| Key words: Pb（In1/2Nb1/2）O3-Pb（Mg1/3Nb2/3）O3-PbTiO3（PIMNT） thin film thickness size effect electrical properties polarization pyroelectric coefficient |
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