| 摘要: |
| 讨论了非易失闪存（NOR Flash）器件中ONO介质层厚度的精度控制.通过归一化不同密度器件分组，优化多层复杂薄膜的光学量测精度，优化氮化硅层的均匀性，实现了对ONO介质层厚度更精确的控制.结合光学厚度与电性厚度的相关性，可以及时得到ONO工艺的安全窗口. |
| 关键词: 闪存 堆叠电容 ONO介质层 读写速度 数据存储能力 |
| DOI：10.3969/J.ISSN.1000-5137.2020.04.015 |
| 分类号:TN47 |
| 基金项目: |
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| Research and improvement on the precision control of the stacked capacitance in NOR Flash |
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LANG Yuhong, LU Zhenjie, QI Peng
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Engineering Ⅱ Division, Shanghai Huali Microelectronics Corporation, Shanghai 201203, China
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| Abstract: |
| The precision control of the thickness of the ONO structure in NOR Flash device was discussed in the paper. The control of the thickness of the ONO structure became more precisely by means of normalizing the different density groups of devices, optimizing the optical measurement accuracy of multilayer complex films as well as the uniformity of silicon nitride layer. The safe ONO process window could be obtained in time by combining the relationship between the optical thickness and electrical thickness. |
| Key words: flash stacked capacitance ONO structure I/O speed data storage capacity |
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