| 摘要: |
| 本研究利用分子束外延的方法生长了Gd掺杂氮化物半导体。根据X线衍射和XAFS测定未有发现第二相的析出。观察到了来自InGdGaN的光致发光，发光峰随着InN的摩尔份数的变化而变化。这些材料在室温明显地观测到了磁滞曲线。Si共掺杂的GaGdN超晶格显示出了超大的磁矩，其原因可归于载流子诱发铁磁。最后，说明了这一材料在自旋发光二极管中的应用。 |
| 关键词: 稀磁半导体 铁磁性 光致发光 硅共掺杂 超晶格 自旋半导体器件 |
| DOI： |
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| Gadolinium-doped Ⅲ-nitride diluted magnetic semiconductors for spintronics applications |
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ZHOU Yikai
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College of Mathematics and Sciences,Shanghai Normal University
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| Abstract: |
| The present status of the Gd (gadolinium)-Ⅲ-nitride semiconductor layers grown by plasma-assisted molecular beam epitaxy is described.No phase separation and substitutional incorporation are confirmed by X-ray Diffraction and X-ray Absorption Fine Structure measurements.Photoluminescence peak energy for the Gd-doped InGaN is shifted with InN molar fraction.Clear hysteresis and saturation are observed in the magnetization versus magnetic field curves at room temperature.Si co-doping as well as superlattice structures enhances the magnetization.Results are understood with the carrier-mediated ferromagnetism.Finally,examples of the spintronic semiconductor devices,where the relation between the spin-polarized carriers and the circular-polarized light is used,and the present status to realize such devices are described. |
| Key words: Ⅲ-Nitride Semiconductor diluted magnetic semiconductors Gadolinium-doped ferromagnetic characteristics photoluminescence emission si-codoping superlattice structure spintronic semiconductor device |
