| 摘要: |
| 研究了13 nm CdTe-HgTe量子阱在高压下的结构和电输运性能,原位高压拉曼测试结果表明：低压时拉曼位移在118 cm-1和138 cm-1处有两个拉曼模式,分别与横向光学声子和纵向光学声子有关.原位高压电输运研究结果表明：13 nm CdTe-HgTe量子阱在4.0 GPa压力下出现了超导现象,超导转变温度（TC）为5.0 K,在9.3 GPa时超导电性消失,继续加压至14.1 GPa时又重新出现超导现象,并且超导电性一直持续到56.2 GPa. |
| 关键词: 拓扑绝缘体 CdTe-HgTe量子阱 高压 超导电性 |
| DOI：10.3969/J.ISSN.1000-5137.2023.05.012 |
| 分类号:O 521+.3 |
| 基金项目:国家自然科学基金（52172005） |
|
| Pressure-induced superconductivity of 13 nm CdTe-HgTe quantum wells |
|
LUO Yongfa1, WU Yanhui1,2, QIN Xiaomei1
|
|
1.Mathematics and Science College, Shanghai Normal University, Shanghai 200234, China;2.Center for High Pressure Science & Technology Advanced Research, Shanghai 201203, China
|
| Abstract: |
| In this paper the structure and electrical transport properties of 13 nm CdTe-HgTe quantum wells under high pressure are studied. The results of in-situ high pressure Raman spectroscopy show that there are two Raman modes at 118 cm-1 and 138 cm-1 at low pressure, which are respectively related to the transverse optical phonons and longitudinal optical phonons. In-situ high pressure electrical transport studies indicate that the superconductivity of 13 nm CdTe-HgTe quantum wells emerges at 4.0 GPa, with 5.0 K of the superconductivity transition temperature （TC）, which disappears at 9.3 GPa. And the superconductivity appeares again when the pressure is uploaded to 14.1 GPa, and it persists up to 56.2 GPa. |
| Key words: topological insulator CdTe-HgTe quantum well high pressure superconductivity |
