| 摘要: |
| 提出了一种无静态漏电流的高性能电平转换器.与现有的电平转换器不同,此设计能够在无静态功耗的情况下,将阈值电压转换为全摆幅输出,只要输入电平高于输出端电压域的NMOS的阈值电压即可正常工作,并且具有更短的传播延时和更低的动态功耗.此设计具有通用性,其电平转换范围仅受限于半导体工艺.针对40 nm工艺实现了该电平转换器电路,并且用SPICE模型进行了仿真.仿真结果显示:该电平转换器能够在无静态功耗的情况下,将0.9 V的输入电平转换为输出端电压域的工作电平1.8 V,传播延时仅为200 ps. |
| 关键词: 超大规模集成电路 40 nm 多电压域 电平转换器 |
| DOI： |
| 分类号: |
| 基金项目: |
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| A threshold to full swing bidirectional level shifter for multi－voltage system |
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HA Jixin, GAO Yuzhu
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Institute of Electronics and Information, Tongji University
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| Abstract: |
| This paper presents a high performance level shifter with null static leakage current. Unlike the existing level shifter circuits, the proposed level shifter can shift threshold voltage level to full swing level without any static power consumption as long as the input signal level is higher than the threshold voltage of NMOS in output power domain. Moreover, the proposed level shifter has shorter propagation delay and consumes less dynamic power than existing designs. The proposed circuit is generic in nature and the range of shifting level is limited only by the scope of the semiconductor process. The proposed level shifter is designed in 40nm CMOS technology and simulated in SPICE. The simulation results show that the proposed level shifter circuit is able to shift 0.9 V of input level to 1.8 V of operating voltage of the output domain 200 ps propagation delay and null static power consumption. |
| Key words: VLSI 40 nm multi voltage designs level shifter |
